High performance compliant substrate

ABSTRACT

A substrate structure is presented that can include a porous polyimide material and electrodes formed in the porous polyimide material. In some examples, a method of forming a substrate can include depositing a barrier layer on a substrate; depositing a resist over the barrier layer; patterning and etching the resist; forming electrodes; removing the resist; depositing a porous polyimide aerogel; depositing a dielectric layer over the aerogel material; polishing a top side of the interposer to expose the electrodes; and removing the substrate from the bottom side of the interposer.

BACKGROUND OF THE INVENTION

1. Technical Field

Embodiments of the present invention relate High PerformanceInterposers.

2. Discussion of Related Art

In Chip-first approach, the die are flip-chip mounted on a thickinterposer wafer and then molded. In addition to providing electricalconnections through the interposer, thermal insulation and warpagecharacteristics are also considered. Therefore, interposers should havegood mechanical and thermal characteristics in order to both thermallyinsulate between devices mounted on the interposer and to reduce warpageof the final package.

Therefore, there is a need for high performance interposers andsubstrates.

SUMMARY

In accordance with aspects of the present invention, an substratestructure can include a porous polyimide material; and electrodes formedin the porous polyimide material. A method of forming a substrate caninclude depositing a barrier layer on a substrate; depositing a resistover the barrier layer; patterning and etching the resist; formingelectrodes; removing the resist; depositing a porous polyimide aerogel;depositing a dielectric layer over the aerogel material; polishing a topside of the interposer to expose the electrodes; and removing thesubstrate from the bottom side of the interposer.

These and other embodiments are further discussed below with respect tothe following figures.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates an example interposer according to some embodimentsof the present invention.

FIG. 2 illustrates a process for forming the example interposerillustrated in FIG. 1.

FIGS. 3A through 3F illustrate structurally the process shown in FIG. 2.

FIGS. 4A through 4H illustrates various configurations using interposersaccording to some embodiments of the present invention.

DETAILED DESCRIPTION

In the following description, specific details are set forth describingsome embodiments of the present invention. It will be apparent, however,to one skilled in the art that some embodiments may be practiced withoutsome or all of these specific details. The specific embodimentsdisclosed herein are meant to be illustrative but not limiting. Oneskilled in the art may realize other elements that, although notspecifically described here, are within the scope and the spirit of thisdisclosure.

This description and the accompanying drawings that illustrate inventiveaspects and embodiments should not be taken as limiting--the claimsdefine the protected invention. Various mechanical, compositional,structural, and operational changes may be made without departing fromthe spirit and scope of this description and the claims. In someinstances, well-known structures and techniques have not been shown ordescribed in detail in order not to obscure the invention.

Additionally, the drawings are not to scale. Relative sizes ofcomponents are for illustrative purposes only and do not reflect theactual sizes that may occur in any actual embodiment of the invention.Like numbers in two or more figures represent the same or similarelements.

FIG. 1 illustrates an interposer or substrate 100 according to someembodiments of the present invention. As shown in FIG. 1, interposer orsubstrate 100 is formed by electrodes 102 embedded in a porous polyimideor in a mesoporous layer or material 104. Porous polyimide or mesoporousmaterial 104 provides high thermal performance, high mechanicalstrength, as well as the ability to blunt stress fields and bluntpropagating cracks. The ability to block cracks suppresses thepropagation of cracks emanating from the topside or bottom side ofmaterial 104. In some embodiments, the material 104 may deform locallyto cushion the large stresses generated by the various mechanical andelectrical elements it supports.

Most aerogel products currently available are silica based and breakdown on handling, shedding small dust particles. Consequently, mostconventional aerogels are encapsulated to prevent the dust.Additionally, the insulation properties of the aerogel degradessignificantly over time. However, material 104 can be, for example,formed from a porous polyimide aerogel. Polyimide aerogels are flexible,mechanically robust and do not shed dust. Further, polyimide aerogelshave good thermal conductivity and dielectric properties.

One polyimide aerogel has been developed by NASA and is described morefully in “Mechanically Strong, Flexible Polyimide Aerogels Cross-Linkedwith Aromatic Triamine” by Mary Ann B. Meador, Ericka J. Malow, RebeccaSilva, Sarah Wright, Derek Quade, Stephanie L. Vivod, Haiquan Guo, JiaoGuo, and Miko Cakmark, ACS Applied Materials & Interfaces, Sep. 6, 2012and “Polyimide Aerogels Cross-Linked through Amine FunctionalizedPolyoligomeric Silsesquioxane” by Haiquan Guo, Mary Ann B. Meador, LindaMcCorkle, Derek J. Quade, Jiao Guo, Bart Hamilton, Miko Cakmak, andGuilherme Sprowl, ACS Applied Materials & Interfaces, Feb. 4, 2011.Polyimide aerogels can be manufactured as a thin film, which can beflexible and yet maintain excellent tensile properties. Polyimideaerogels can be about 500 times stronger than traditional silicaaereogels. Polyimide aerogels can be custom manufactured as thickerparts with no need to encapsulate or layer on a flexible matrix. In someembodiments, Polyimide aerogels can have low thermal conductivity, forexamples k values of 14-20 mW/m-K, which offers 2-5 times improvedperformance over polymer foams. The R values can range from 2-10 timeshigher than polymer foams, which is in line with silica aerogels of thesame density. Polyimide aerogels can be composed of more than 95 percentair by volume and have densities as low as 0.08 g/cm³. Polyimideaerogels can withstand temperatures up to 300° C.

In some embodiments, polyimide gels can be formed from combinations ofdiamine and dianhydride. For example, a combination of polyamic acidsolutions of 3,3′,4,4′-biphenyltetracarboxylic dianhydride (BPDA),bisaniline-p-xylidene (BAX) and OAPS that are chemically imidized anddried using supercritical CO₂. The polyimide gels can be cross-linkedthrough a polyhedral oligomeric silsesquioxane (POSS) or aromatictriamine (TAB).

Polyimide aerogels can have a density as low as 0.08 g/cm³, prositygreater than 90%, dielectric constant (X-band between 1.1 and 1.3), andYoung's Modulas of 1-100 MPa depending on density.

The thermal conductivity of polyimide aerogels such as those used in thepresent embodiments, at room temperature, is about k=14 mW/m-K. Thisthermal conductivity is very low. For comparison, the thermalconductivity of various materials is provided in the following table:

Thermal conductivity Material (k in units of mW/m-K) Polyimide 14-20Aerogel Air 24 Carbon dioxide 14.6 fiberglass 40 Argon 16 Foam glass 45glass 1050 gold 310 × 10³

FIGS. 2 and 3A through 3F illustrate an example process for producinginterposer 100 as illustrated in FIG. 1. As illustrated in FIGS. 2 and3A, in step 202 a barrier layer 304 is deposited on a substrate 302.Substrate 302, for example, can be a dummy substrate or a silicon glasssubstrate. In some cases, substrate 302 can include active or passivedevices. In some embodiments, substrate 302 may include blind cavitiesor recesses. Barrier layer 304 can be, for example, a Ni barrier layer,a TaN/Ta layer, a NiP layer, or a TiN layer, which is coated over thetop surface of substrate 302. In some applications, the barrier layermay comprise of a dielectric material or combination of a dielectriclayer and a conductive layer. In some embodiments, a seed layer (notshown) can be provided over barrier layer 304 if needed. For example ifbarrier layer 304 is a platable material for example, nickel and somecopper alloys, a seed layer may not be necessary. In step 204, a resistlayer 306 can be deposited over barrier layer and/or seed layer 304.. Insome embodiments, layer 304 may comprise a distribution layer orinterconnection layers for example BEOL. The interconnection layer canbe capped with a dielectric layer. The dielectric can be patterned toexpose electrical and or mechanical interconnection features beneathprior to seed layer coating and the formation of the resist layer.

As shown in FIG. 2 and FIG. 3B, in step 206 resist layer 306 ispatterned and in step 208 metal, for example copper, is deposited toform electrodes 102. In step 210, resist layer 306 is removed, barrierlayer 304 (along with the seed layer if present) are removed selectivelywithout removing significant portions of the of the plated feature 102.In step 212 and as shown in FIG. 3C, electrodes 102 can be coated, forexample with another barrier layer 308. Barrier layer 308 may be formedby selective or non-selective methods. In some embodiments, barrierlayer 308 may be a conducting material formed by electroless methods,for example coating nickel or nickel alloys such as NiP, NiW, cobalt andcobalt alloys and combinations thereof on the plated structure 102. Inother embodiments the barrier layer may be an insulator formed by PECVDor ALD or other known methods. The insulating barrier layer 308 may beformed of SiN, SIC, diamond like carbons (DLC). In some embodiments, theconductive material 102 can include wirebond. For example, the wirebondmay be formed on exposed interconnection features. The conductivewirebond material may include Au, Ni, Cu and their various alloys and aclad layer or layers. When the conductive feature 102 is gold, thebarrier layer 308 may not be needed. In some embodiments, conductivelayer or layers can be formed by sputtering or electroplating methods orboth. The said layer can be also formed by metal lamination methods. Forexample, a continuous conducting sheet is formed and then patterned tocreate structures such as those shown in FIG. 3C. In some applications,the metal etching is formed by using anisotropic etchants for theconductive features 102 and any traces of traces of interest. Forexample, if the coated layer 102 comprise of titanium-aluminum-titaniumlaminate, chloride ions RIE plasma can be used to remove the unwantedportions of the blanket conductive layer to form at least features 102.In some applications, anisotropic metal removing formularies in thepresence of electric field can be used to form conductive features 102with aspect ratio (H/W) greater than 1.5. In step 214 and as shown inFIG. 3D, a foam material 104 is formed. In some embodiments, asdiscussed above, foam material 104 can be a polyimide aerogel or amesoporous material. A polyimide aerogel can be spin-deposited andcured. In some embodiments, curing involves a heating step. In someembodiments mesoprous material other the polyimide aerogel may be usedor used in combination with polyimide aerogel. In some embodiments, thedielectric constant k of the mesoporous layer can be less than 2.

In some embodiments, the coated metal 102 protrudes beyond the surfaceof the coated polymer aerogel. For example, the coated metal 102 mayprotrude at least more than 1 micron over the surface of the formedaerogel. A removal may be performed to expose the conductive electrode102 on the top prior to the attachment of device 404. In certainembodiments, metal features 102 may not extend through the foammaterial, e.g. where damascene, conductive lines, traces, or otherconductive features are desired. Moreover, while metal features 102 areshown extending through layers 302 and 304, this is not required and thefeatures may not protrude through either or both of these layers.

In some embodiments, in step 216, a low-stress low stress dielectriclayer for example a Si-containing layer 310 is deposited over foam 104as shown in FIG. 3E. Low-stress layer 310 can be, for example, a SiO₂layer, a SiN layer, a SiON layer, a SiOF layer, a SiC layer, a diamondlike carbon (DLC), a polyimide or combinations thereof. In step 218, apolish step is performed to expose electrodes 102 on the top. The coateddielectric layer may comprise the distribution layer. Portions of thedistribution layer may be disposed beneath the exposed conductiveelectrode 102 and other portions over electrode 102. One or moremetallization layers may be coated within the dielectric. In someapplications a contact pad structure (not shown) is coated over theappropriate conductors 102. Semiconductor devices 404 (see FIG. 4) andor passive circuit elements (not shown) may be attached to the top ofmaterial 104.

In some embodiments, the mesoporous layer of material 104 may bedisposed over the seed layer 304 cavities are then formed in themesoprorous layer material 104 by RIE methods or by ablation using laserbeam for example. The exposed seed layer is cleaned and the conductiveelectrode is formed by plating methods or screen printing or particlefilling methods, prior to subsequent steps. For example solder balls orparticles may be deposited in the cavities in material 104. The material104 is thermal treated to fuse the solder material within the cavity.Any unwanted solder or other materials on the surface of material 104 isremoved. In some application, the removal step can comprise of highprecision milling step to remove for example the top five (5) microns ofmaterial 104.

In some embodiments, the attached devices can be encapsulated, forexample by transfer molding methods. In some embodiments the Young'smodulus of the encapsulant material is higher than that of aerogelmaterial 104. In some embodiments, the Young's modulus of theencapsulant is similar to that of the aerogel material 104. In someembodiments, the Young's modulus of the encapsulant is lower than thatof the aerogel 104. In some embodiments, the encapsulant can bemesoporous material. The top surface of the encapsulant may be polishedif necessary to further reduce the thickness of the die and encapsulant.The encapsulated structures can be separated from the support layer 302and any unwanted material on 104 can be removed including the originalplating seed layer to expose the conductive feature 102.

Porous polyimide or mesoporous material 104 provides high thermalperformance, high mechanical strength and the ability to blunt stressfields and blunt propagating cracks. The ability to block crackssuppresses the propagation of cracks emanating from disposed on thetopside or bottom side of material 104. In some embodiments, thematerial 104 may deform microscopically locally to cushion the largestresses generated by the various mechanical and electrical elements itsupports. The suppression of stress fields and crack propagation inmicroelecronic packages improves the yield and reliability of the entirepackage or packaged devices.

The top surface may be attached to a support layer to remove the supportlayer 302. In some applications where the support layer comprise ofembedded conductor 102, the support layer 302 may thinned down by knownmethods and processed to reveal the bottom side of the electrodes 102 inthe remaining support layer 302 (not shown). Other structures may beattached to the backside of the support layer. The other structures mayinclude a board, a substrate, a chip, a cooling element or anotherinterposer.

In step 220, as illustrated in FIG. 3F, glass substrate 302 and anyunwanted materials are removed to expose electrodes 102 on the bottom.

FIGS. 4A through 4H illustrate various configurations using aninterposer or substrate 100 according to some embodiments of the presentinvention. FIG. 4A illustrates a configuration with devices 404 attachedto a top side of interposer 100 and devices 406 attached to a bottomside of interposer 100. FIG. B illustrates a configuration with a layer408 deposited on a top side of interposer 100. Layer 408 can be aredistribution layer (RDL) or a back end-of-line layer (BEOL) and canalso be formed using polyimide aerogel or a low K material as thedielectric in the RDL or BEOL structure. FIG. 4C illustrates aconfiguration with layer 408 and devices 404 attached on layer 408. Theadvantages of these configurations results from the electricalinsulation in interposer 100 formed from low k material (k<1), thethermal barrier provided by interposer 100, and flexible and conformalelectronics.

Additionally, the porous polyimide or mesoporous material 408 provideshigh mechanical strength and also blunt stress fields and bluntpropagating cracks that may originated from the presences of devices404. In some embodiments, the layer 408 may deform microscopicallylocally to cushion the large stresses generated by the presence ofvarious devices 404 and electrical elements 102. The suppression ofstress fields and crack propagation protects the devices 404 fromcracking and experiencing stress fields from neighboring devices inmicroelecronic packages.

In some embodiments, there are no conducting thru-electrodes in thepolyimide aerogel or mesoporous layer 104. Conductive features can beformed in the patterned mesoporous layer 104 by damascene ornon-damascene method or by combination of both methods. A suitabledielectric layer or the polyimide aerogel or polyimide layer can be usedto fabricated multilevel metallization feature over the layer 104.Various homogenous or and heterogeneous devices may be assembled orattached or couple electrically and mechanically to the metallizationfeatures or pads disposed over layer 104. The various attached saiddevices communicated with each other through the interconnect layerdisposed over layer 104. In some embodiments, active or passive devicescan be embedded in layer 104 and the embedded electrode communicatedwith other devices via their terminals exposed on the top or bottomsurface of layer 104.

FIGS. 4D and 4E illustrate a configuration that keeps memory cool fromthe heating of a microprocessor. As shown in FIG. 4D, a top layer 408,which can be an RDL or BEOL, is deposited on top of interposer 100 whilea bottom layer 410, which also can be an RDL or BEOL formed withpolyimide aerogel, is deposited on the bottom side of interposer 410. Amicroprocessor or a graphics microprocessor 412 is attached to top layer408. Memory 414 is attached to bottom layer 410. An optional heat sink416 can be attached on top of microprocessor 412. In this configuration,memory 414 is well insulated thermally from microprocessor 412 whileelectrical contact is between microprocessor 412 and memory 414 is madethrough top layer 408, bottom layer 410, and interposer 100. In someembodiment, the device 414 can be located on the same surface as theheat generating device 412, but further away, for example by more than100 microns, from device 412 without causing higher warpage in theinterposer 100. In some applications, the second device 414 can belocated more than 200 microns from the first device and the said devicerelative disposition not degrading interposer or substrate warpage.

FIG. 4E shows a configuration where a memory 414 is deposited to the topside of layer 408 with microprocessor 412 and is separated frommicroprocessor 412 by a spacer 418. Spacer 418 can be formed of porouspolyimide or a mesoporous layer or their combination on top layer 408between microprocessor 412 and memory 414. Again, memory 414 placed ontop layer 408 is thermally insulated from microprocessor 412 while alsomaking electrical contact through metallization in top layer 408. Anoptional heat sink 416 can be attached on top of microprocessor 412 tofurther remove heat.

FIGS. 4F and 4G illustrate a configuration where the top layer 420comprises a layer containing high modulus fiber layer 420 and a bottomlayer 422 comprising a layer similar to the top layer 420 on theinterposer 100. Top fiber layer 420 and bottom fiber layer 422 can behigh-Young's modulus fiber composite layers (for example Kevlar) thatprovide additional structural stiffness to interposer 100. The layer 420and 422 may be continuous or discontinuous and the layer 420 and 422 maybe thicker in some regions or portions of the surface than in otherareas. For example, in some applications, the layer 420 or 422 or bothmay selectively disposed around the periphery of the top surface andbottom surface of layer 104. FIG. 4G illustrates devices 424 attached totop fiber layer 420 and bottom fiber layer 422. The fiber layers canhelp provide for a low warpage interposer. Conductive path ways, notshown, may be formed through layer 420 and contact pads formed over theconductive pathways. Device 424 may be attached on the formed contactpads.

FIG. 4H illustrates addition of a top layer 426 over top fiber layer420. Top layer 426 can be, for example, an RDL layer, which also may beformed from porous polyimide. Devices 424 can then be attached to toplayer 426. In some embodiments, fiber layer 420 is a good thermalconductor. Conductive path ways, not shown, may be formed through layers420 and 426 with contact pads formed over the conductive pathways.Device(s) 424 may be attached on the formed contact pads.

In other embodiments of this invention layer 104 comprise a mesoporousinorganic material formed by aerogel and thermal methods. In oneapplication the Young's modulus of the inorganic mesoporous layer 104 ishigher than the dielectric layer formed on the top or bottom surface ofthe mesoporous layer 104. While the implementations described abovegenerally indicate that the metal features 102 are formed and patternedbefore foam layer 104 is formed, this is not a requirement. The foamlayer 104 maybe formed first with openings formed therein. The metalfeatures 102 may then be formed within the openings as described above,e.g. with regard to FIG. 3B.

In the preceding specification, various embodiments have been describedwith reference to the accompanying drawings. It will, however, beevident that various modifications and changes may be made thereto, andadditional embodiments may be implemented, without departing from thebroader scope of the invention as set for in the claims that follow. Thespecification and drawings are accordingly to be regarded in anillustrative rather than restrictive sense.

1. A substrate structure, comprising: a porous polyimide material; andelectrodes formed in the porous polyimide material.
 2. The structure ofclaim 1, wherein the porous polyimide material is formed with apolyimide aerogel.
 3. The structure of claim 1, further including afirst redistribution layer on a first side of the porous polyimidematerial, the redistribution layer making electrical contact with theelectrodes.
 4. The structure of claim 3, further including a secondredistribution layer on a second side of the porous polyimide material,the electrodes providing electrical paths from the first redistributionlayer to the second redistribution layer.
 5. The structure of claim 3,further including a spacer formed over the first redistribution layer tothermally separate a first device from a second device.
 6. The structureof claim 1, further including a top fiber based layer on a top side ofthe porous polyimide material.
 7. The structure of claim 6, furtherincluding a bottom fiber based layer on a bottom side of the porouspolyimide material.
 8. The structure of claim 6, further including a topredistribution layer over the porous polyimide material.
 9. The methodof claim 19, wherein said providing electrodes includes: depositing aresist over the substrate patterning and etching the resist; forming theelectrodes defined using the patterned and etched resist, at least partof the electrodes being part of the interposer; and removing the resist;wherein the method further includes: depositing a low-stress layer overthe polyimide aerogel; and polishing a top side of the interposer toexpose the electrodes.
 10. The method of claim 9, further includingdepositing a barrier layer over he substrate before depositing theresist, wherein the resist is deposited over the barrier layer.
 11. Themethod of claim 9, wherein forming the electrodes includeselectroplating the electrodes in one or more cavities formed bypatterning and etching the resist.
 12. The method of claim 11, saidelectroplating the electrodes includes electroplating at least one ofcopper, nickel, aluminum, tungsten.
 13. The method of claim 9, furtherincluding coating at least parts of the electrodes with a barrier layerbefore depositing the porous polyimide aerogel, wherein the porouspolyimide aerogel is deposited over the barrier layer formed over theelectrodes in said coating.
 14. The method of claim 9, whereindepositing the porous polyimide aerogel includes spin-coating thepolyimide aerogel and curing the polyimide aerogel.
 15. The method ofclaim 9, wherein depositing the low-stress layer includes depositing asilicon bearing layer over the porous polyimide aerogel.
 16. The methodof claim 9, further including depositing a redistribution layer on thetop side of the interposer.
 17. The method of claim 9, further includingdepositing a redistribution layer on the bottom side of the interposer.18. The method of claim 9, further including depositing ahigh-performance fiber layer on the top side or the bottom side of theinterposer.
 19. A method of forming an interposer, comprising: providingelectrodes on a substrate; depositing a porous polyimide aerogel betweenat least two adjacent electrodes; and removing the substrate from theinterposer.
 20. An interposer, comprising: a mesoporous material; andelectrodes formed in mesoporous material.